| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability, and to provide a manufacturing method of the semiconductor device with a good yield. SOLUTION: The manufacturing method of the semiconductor device comprises a process (a) for forming a wiring material film 5 buried in a first interlayer insulating film 1, and provided with a first cap metal 6 on the upper surface thereof; a process (b) for forming a groove 10 and a via hole 9 on a second interlayer insulating film 8 provided above the wiring material film 5; a process (c) for forming a barrier metal 11 in the inner surfaces of the groove 10 and the via hole 9; a process (d) for removing the part of the barrier metal 11 positioned on the bottom of the via hole 9, and a part of the wiring material film 5 and the first cap metal 6; and a process (f) for forming a second cap metal 21 on the upper surface of the wiring material film 5. Even when the oxide film of a metal strong in a coupling force with oxygen is formed on the upper surface of the wiring material film 5, the oxide of the metal can be removed in the process (d). COPYRIGHT: (C)2008,JPO&INPIT
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