| 摘要 |
Provided is an optical semiconductor device, which includes a GaAs substrate (or a semiconductor substrate) 20 ; an n-type contact layer (or a doping layer) 21 formed on one surface 20 a of the GaAs substrate 20 ; an active layer 25 formed on top of the n-type contact layer 21 and including at least one quantum dot 23 ; a p-type contact layer (or a contact layer) 26 formed on top of the active layer 25 and being of an opposite conduction type to the n-type contact layer 21 ; an insulating layer 29 formed on top of the p-type contact layer 26 and including a first opening 29 a whose size is such that a contact region CR of the p-type contact layer 26 lies within the first opening 29 a; a p-side electrode layer 33 c formed on top of the contact region CR of the p-type contact layer 26 and on top of the insulating layer 29 and including a second opening 33 a lying within the first opening 29 a; and a n-side electrode layer (or a second electrode layer) 37 formed on the other surface 20 b of the GaAs substrate 20.
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