| 摘要 |
The present invention provides a process for forming a porous dielectric film, the process comprising: forming onto at least a portion of a substrate a composite film comprising Si, C, O, H and Si-CH<SUB>3 </SUB>groups, wherein the composite film comprises at least one silicon-containing structure-forming material and at least one carbon-containing pore-forming material; and exposing the composite film to an activated chemical species to at least partially modify the carbon-containing pore-forming material, wherein at least 90% of Si-CH<SUB>3 </SUB>species in the as deposited film remains in the film after the exposing step as determined by FTIR.
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