| 摘要 |
A hetero-junction bipolar transistor is provided including emitter contact region, an emitter region made of a first semiconductor material, a base region made of a second semiconductor material having a smaller energy band gap than the first semiconductor material, a collector region made of the first semiconductor material, and a collector contact area, the regions being serially formed on a surface of a substrate in a direction parallel to the surface thereof. A buffer layer made of a third semiconductor material with an energy band gap larger than the first semiconductor material is provided between the emitter region, the base region, the collector region and the substrate surface. Emitter, base and collector electrodes are also provided, in contact with the emitter contact region, the base region, and the collector region, respectively.
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