| 摘要 |
<p>A thin film transistor substrate and a manufacturing method thereof are provided to prevent wave noise due to an active tail by forming a semiconductor pattern on superposed region of a source electrode, a drain electrode and a gate electrode. Gate lines(102) and data lines(104) are intersected each other on a substrate to define a pixel region, with a gate insulating layer(162) being interposed between the lines. A thin film transistor(TFT) has a gate electrode(114) extending from the gate line, a source electrode(110) extending from the data line, a drain electrode(112) facing the source electrode and a semiconductor pattern(150) formed on the gate insulating layer. Pixel electrodes(154,156) extend from the drain electrode. A gate pad(124) has a gate pad lower electrode(122) and a gate pad upper electrode(128). A data pad(134) has a data pad lower electrode(132) and a data pad upper electrode(138). A protective layer(164) is formed to cover the gate insulating layer, the data line, the thin film transistor and the pixel electrode. A source/drain metal layer(173) is formed on a transparent metal layer(171).</p> |
