| 摘要 |
PROBLEM TO BE SOLVED: To enhance the driving performance of a MOSFET and suppress variations in characteristics. SOLUTION: A semiconductor device comprises a semiconductor layer 1, a MOSFET formed on a surface (100) of the semiconductor layer 1 having a channel length direction <110>, and an element isolation region surrounding the MOSFET. The element isolation region having a channel widthwise direction of the MOSFET has a dummy layer 3 formed as part of the semiconductor layer 1 and not formed with an element, and an element isolation insulating layer 2 formed to have minimum processed dimensions between the MOSFET and the dummy layer 3. COPYRIGHT: (C)2008,JPO&INPIT
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