| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam device to carry out with high throughput evaluation of a test piece such as a semiconductor wafer having a minute pattern of 0.1μm or less. SOLUTION: The electron beam device irradiates primary electron beams generated by an electron gun on a test piece and forms the secondary electrons emitted from the test piece on a detector by a map projection optical system. The electron gun 61 has a cathode 1 and an extraction electrode 3 and the electron emitting face 1a of the cathode is concave. The extraction electrode 3 has a convex surface 3a consisting of partial outer faces of a second sphere facing the electron emitting face 1a of the cathode and a hole 73 to penetrate the convex surface for passing the electrons. An astigmatism generating lens 44 of multipoles is provided between the extraction electrode 3 and the test piece. COPYRIGHT: (C)2008,JPO&INPIT
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