发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.
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申请公布号 |
US2007295991(A1) |
申请公布日期 |
2007.12.27 |
申请号 |
US20070757533 |
申请日期 |
2007.06.04 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KATO YOSHIAKI;ANDA YOSHIHARU;TAMURA AKIYOSHI |
分类号 |
H01L29/812;H01L21/338 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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