发明名称 Fet amplifier, pulse modulation module, and radar device
摘要 An FET amplifier includes an FET for amplifying a high-frequency signal to be input to the gate on the basis of a gate bias voltage from a gate bias control circuit. In the FET amplifier, a high-frequency signal input circuit and the output portion of an inverting amplifier are made conductive to the gate of the FET. A voltage stabilizing circuit generating a positive DC constant-voltage signal is made conductive to the non-inverting input portion of the inverting amplifier, and a gate bias control signal input circuit is made conductive to the inverting input portion through an inverter circuit. When the output voltage from the inverter circuit is 0 V, the inverting amplifier outputs a positive gate bias voltage (in the High state) and, when the output voltage from the inverter circuit is a fixed positive voltage, the inverting amplifier outputs a negative gate bias voltage (in the Low state) lower than the pinch-off voltage of the FET. The FET is ON/OFF controlled by the gate bias voltage and pulse modulates the input high-frequency signal to output the signal.
申请公布号 GB2426646(B) 申请公布日期 2007.12.27
申请号 GB20050026221 申请日期 2005.02.23
申请人 MURATA MANUFACTURING CO., LTD 发明人 SADAO YAMASHITA
分类号 H03C1/62;G01S7/282;H03F1/30;H03F3/189;H03F3/193;H03F3/21;H03F3/72 主分类号 H03C1/62
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