发明名称 |
Fet amplifier, pulse modulation module, and radar device |
摘要 |
An FET amplifier includes an FET for amplifying a high-frequency signal to be input to the gate on the basis of a gate bias voltage from a gate bias control circuit. In the FET amplifier, a high-frequency signal input circuit and the output portion of an inverting amplifier are made conductive to the gate of the FET. A voltage stabilizing circuit generating a positive DC constant-voltage signal is made conductive to the non-inverting input portion of the inverting amplifier, and a gate bias control signal input circuit is made conductive to the inverting input portion through an inverter circuit. When the output voltage from the inverter circuit is 0 V, the inverting amplifier outputs a positive gate bias voltage (in the High state) and, when the output voltage from the inverter circuit is a fixed positive voltage, the inverting amplifier outputs a negative gate bias voltage (in the Low state) lower than the pinch-off voltage of the FET. The FET is ON/OFF controlled by the gate bias voltage and pulse modulates the input high-frequency signal to output the signal. |
申请公布号 |
GB2426646(B) |
申请公布日期 |
2007.12.27 |
申请号 |
GB20050026221 |
申请日期 |
2005.02.23 |
申请人 |
MURATA MANUFACTURING CO., LTD |
发明人 |
SADAO YAMASHITA |
分类号 |
H03C1/62;G01S7/282;H03F1/30;H03F3/189;H03F3/193;H03F3/21;H03F3/72 |
主分类号 |
H03C1/62 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|