发明名称 METHOD OF MANUFACTURING TRANSPARENT THIN FILM TRANSISTOR
摘要 <p>A method for manufacturing a transparent thin film transistor is provided to reduce a manufacturing cost by simplifying a manufacturing process of the transparent thin film transistor. A gate electrode(21) is formed on a substrate(10). A gate insulating layer(23) is formed on the gate electrode. A transparent semiconductor layer(25) of a patterned state is formed on the gate insulating layer. A photoresist layer(30) is formed on the transparent semiconductor layer in order to expose the source region and the drain region of the transparent semiconductor layer. The exposed source and drain regions are surface-processed by using the photoresist layer as a mask. A conductive layer is formed on an entire surface of the substrate. The conductive layer is patterned by removing the photoresist layer so that a source electrode contacts the source region of the transparent semiconductor layer and a drain electrode contacts the drain region of the transparent semiconductor layer.</p>
申请公布号 KR100787455(B1) 申请公布日期 2007.12.26
申请号 KR20060075298 申请日期 2006.08.09
申请人 SAMSUNG SDI CO., LTD. 发明人 SHIN, HYUN SOO;MO, YEON GON;JEONG, JAE KYEONG
分类号 H01L29/786 主分类号 H01L29/786
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