| 摘要 |
933,212. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Oct. 27, 1959 [Aug. 17, 1959], No. 36426/59. Addition to 933,211. Class 37. In a semi-conductor device, especially for thermo-electric applications, the semi-conductor has low thermal conductivity and consists of a solid solution of an A<SP>IV</SP>B<SP>VI</SP> compound and an A<SP>I</SP>B<SP>V</SP>C<SP>VI</SP> 2 compound, i.e. of the type A<SP>I</SP>x/2 B<SP>IV</SP> (1-x) C<SP>V</SP> x/2 D<SP>VI</SP>, wherein the individual components may be partially replaced by components of the same group, i.e. in the most general case, a solid solution having the formula with O # y, z, t, u # 1, and O < x < 1. Suitable solid solutions are Ag x/2 Sn (1-x) Sb x/2 Te, wherein the elements Sn and/or Sb may be replaced by Pb and Bi respectively, and in the general case the solution may contain the elements Au, Ag, Sn, Pb, Bi, Sb, Te and Se. The elements Cu, Si, Ge, P, As, S are also mentioned as being suitable for use in such solutions. The solution may be prepared by the two-temperature process described in Specifications 781,727 and 786,818, or by the methods mentioned in Specification 933,211, and PN junctions may be formed by alloying or diffusion or by doping with the aid of small deviations from stoichiometry. The solid solutions may be used with those described in the parent Specification to form a thermoelectric combination.
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