| 发明名称 |
SEMICONDUCTOR DEVICE HAVING ENHANCED PERFORMANCE AND METHOD |
| 摘要 |
<p>In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.</p> |
| 申请公布号 |
KR20070120974(A) |
申请公布日期 |
2007.12.26 |
| 申请号 |
KR20077022463 |
申请日期 |
2006.03.16 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C.;HVVI SEMICONDUCTORS, INC. |
发明人 |
LOECHELT GARY H.;LUTZ DAVID H.;DAVIES ROBERT B. |
| 分类号 |
H01L29/423;H01L21/336;H01L29/08;H01L29/41 |
主分类号 |
H01L29/423 |
| 代理机构 |
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代理人 |
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| 主权项 |
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