SEMICONDUCTOR DEVICE AND METHOD OF FORMING A METAL LINE OF THE SAME

摘要

A semiconductor device and a method for forming a metal line of the semiconductor device are provided to improve sheet resistance of the metal line by maximizing volume increase of the metal line in a trench. A first barrier metal layer(130) and a second barrier metal layer(140) are sequentially formed on a lower surface of a trench(120) on a semiconductor substrate(100). A third barrier metal layer(150) is formed on a sidewall of the trench. The trench is gap-filled with a metal line. The first barrier metal layer is made of IMP(Ion Metal Plasma) Ti. A thickness of the first barrier metal layer is from 20 to 200 Å. The second barrier metal layer is made of TiN. A thickness of the second barrier metal layer is from 200 to 100 Å. The third barrier metal layer is made of TiNC. A thickness of the third barrier metal layer is from 10 to 100 Å.