Semi-conductor protection structure for electrostatic discharge

摘要

The structure has a field-effect transistor, whose source forms an emitter and whose body forms a base electrode, where the structure is formed as a closed structure. Drain regions (8, 9a, 9b) of a conductive type are formed within an area (12) of the body. The drain regions are connected with one another by a conductor, where each drain region has a separate PN transition. A body connecting region (15) is formed in an outside area of the closed structure and the drain regions are formed in an inside area of the closed structure.