发明名称 Integrated semiconductor memory
摘要 An integrated semiconductor memory includes memory cells that store a first data record has at least one datum with a first or second data value and a second data record has at least one datum with the first or second data value. The integrated semiconductor memory has a combination circuit that generates the third data record on the output side from the data records fed to the combination circuit on the input side to ascertain based on the third data record whether the first and second data records have been fed to the combination circuit on the input side. The combination circuit generates the datum of the third data record with the first data value, if the first and second data records were fed to the combination circuit on the input side.
申请公布号 US7313741(B2) 申请公布日期 2007.12.25
申请号 US20050145192 申请日期 2005.06.06
申请人 INFINEON TECHNOLOGIES AG 发明人 VOLLRATH JOERG;GNAT MARCIN;VON CAMPENHAUSEN AUREL;SCHROEPPEL FRANK
分类号 G01R31/28;G11B20/00;G11B20/18;G11B27/36;G11C29/00;G11C29/14;G11C29/38 主分类号 G01R31/28
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