发明名称 |
Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices |
摘要 |
Methods of film deposition using metals and metal oxides. A thin film of germanium oxide and an oxide of a non-germanium metal is deposited by ALD by alternating deposition of first and second precursor compounds, wherein the first precursor compound includes a metal other than germanium, and the second precursor compound includes germanium.
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申请公布号 |
US7312165(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20050124451 |
申请日期 |
2005.05.05 |
申请人 |
JURSICH GREGORY M;INMAN RONALD S |
发明人 |
JURSICH GREGORY M.;INMAN RONALD S. |
分类号 |
C23C16/40;C23C16/455;H01L21/314;H01L21/316;H01L21/44 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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