Integrated semiconductor memory with temperature-dependent voltage generation

摘要

An integrated semiconductor memory device includes a temperature sensor circuit to generate a temperature-dependent control signal, a reference circuit to generate a temperature-independent reference signal, a comparator circuit and a voltage generator circuit. The comparator circuit generates a first level or second level of an activation signal in a manner dependent on the comparison of the control signal and the reference signal which are both fed to it on an input side. The voltage generator circuit generates a first control signal or a second control signal in a manner dependent on the level of the activation signal. The integrated semiconductor memory enables the generation of two control signals for a selection transistor of a memory cell in a manner dependent on whether the temperature sensor circuit detects a temperature in a first temperature range or in a second temperature range.