METHOD FOR HEAT TREATMENT OF BILLETS OF ACTIVE LASER ELEMENTS FROM MONOCRYSTALS OF SAPPHIRE, WHICH ARE ACTIVATED WITH TITANIUM

摘要

A method for heat treatment of articles from sapphire monocrystals which includes the successive annealing in the saturated steams of thermal dissociation of aluminium oxide under action of the axial loading of 7.8ò105 - 60ò105 N/m2 along the crystallography direction [ ] at a temperature of 1900 - 2010 DEGREE C during 40-80 hours, and then in the atmosphere of argon with methane content of 10 - 30 vol. % at a temperature of 1750 -2030 DEGREE C and reducing potential of ? -100...-170 kJ/mol.