发明名称 |
Fully depleted strained semiconductor on insulator transistor and method of making the same |
摘要 |
An integrated circuit includes multiple layers. A semiconductor-on-insulator (SOI) wafer can be used to house transistors. Two substrates or wafers can be bonded to form the multiple layers. A strained semiconductor layer can be between a silicon germanium layer and a buried oxide layer. A hydrogen implant can provide a breaking interface to remove a silicon substrate from the silicon germanium layer.
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申请公布号 |
US7312125(B1) |
申请公布日期 |
2007.12.25 |
申请号 |
US20040773026 |
申请日期 |
2004.02.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
XIANG QI;BESSER PAUL R.;NGO MINH VAN;PATON ERIC N.;WANG HAIHONG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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