发明名称 Fully depleted strained semiconductor on insulator transistor and method of making the same
摘要 An integrated circuit includes multiple layers. A semiconductor-on-insulator (SOI) wafer can be used to house transistors. Two substrates or wafers can be bonded to form the multiple layers. A strained semiconductor layer can be between a silicon germanium layer and a buried oxide layer. A hydrogen implant can provide a breaking interface to remove a silicon substrate from the silicon germanium layer.
申请公布号 US7312125(B1) 申请公布日期 2007.12.25
申请号 US20040773026 申请日期 2004.02.05
申请人 ADVANCED MICRO DEVICES, INC. 发明人 XIANG QI;BESSER PAUL R.;NGO MINH VAN;PATON ERIC N.;WANG HAIHONG
分类号 H01L21/336 主分类号 H01L21/336
代理机构 代理人
主权项
地址