发明名称 |
Methods and apparatus for cleaning semiconductor devices |
摘要 |
Methods and apparatus for cleaning a semiconductor device are disclosed. A disclosed method comprises forming a capping layer on top of a substrate including a bottom interconnect layer; depositing and patterning an insulating layer on the capping layer to form a damascene structure; etching a portion of the capping layer exposed by the damascene structure; and (d) removing polymers and copper impurities due to the etching by using a HF vapor gas.
|
申请公布号 |
US7312157(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20040918047 |
申请日期 |
2004.08.13 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SHIM JOON BUM |
分类号 |
H01L21/302;H01L21/00;H01L21/306;H01L21/311;H01L21/768 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|