发明名称 Plasma processing apparatus
摘要 A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.
申请公布号 US7311796(B2) 申请公布日期 2007.12.25
申请号 US20030681615 申请日期 2003.10.08
申请人 KABUSHIKI KAISHA EKISHO SENTAN GIJUTSU KAIHATSU CENTER 发明人 GOTO MASASHI;NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA
分类号 H01L21/306;H05H1/46;C23C14/34;C23C16/00;C23C16/511;C23F4/00;H01J37/32;H01L21/304;H01L21/3065;H01L21/31 主分类号 H01L21/306
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