发明名称 |
Plasma processing apparatus |
摘要 |
A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.
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申请公布号 |
US7311796(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20030681615 |
申请日期 |
2003.10.08 |
申请人 |
KABUSHIKI KAISHA EKISHO SENTAN GIJUTSU KAIHATSU CENTER |
发明人 |
GOTO MASASHI;NAKATA YUKIHIKO;AZUMA KAZUFUMI;OKAMOTO TETSUYA |
分类号 |
H01L21/306;H05H1/46;C23C14/34;C23C16/00;C23C16/511;C23F4/00;H01J37/32;H01L21/304;H01L21/3065;H01L21/31 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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