发明名称 |
Spin-current switchable magnetic memory element and method of fabricating the memory element |
摘要 |
A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
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申请公布号 |
US7313013(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20040990401 |
申请日期 |
2004.11.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SUN JONATHAN ZANHONG;PARKIN STUART STEPHEN PAPWORTH |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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