| 摘要 |
In a method of forming a gold alloy contact on silicon, the latter is heated to a temperature between 150 DEG C. and the eutectic point of the silicon-gold alloy system, coated under vacuum with gold, which may contain up to 15% of germanium, and then slowly cooled to room temperature, e.g. over at least 15 minutes. The final alloy may contain an activator from Group III or V of the Periodic Table, particularly antimony or aluminium, and is produced by heating the coated silicon in contact with aluminium or with a gold-antimony alloy to 400-800 DEG C. in an inert atmosphere. Alternatively, the alloy constituents may be codeposited with the gold followed by the elevated temperature alloying process. |
