发明名称 Nonvolatile memory circuit
摘要 A nonvolatile memory circuit includes a flip-flop to degrade an internal circuit irreversibly based on a voltage applied to a first or second bit line so as to latch data in a nonvolatile manner, a first switch coupled between a first output terminal of the flip-flop and the first bit line, a second switch coupled between the first output terminal of the flip-flop and the first bit line, a third switch coupled between a second output terminal of the flip-flop outputting an inverse of an output of the first output terminal and the second bit line, and a fourth switch coupled between the second output terminal of the flip-flop and the second bit line.
申请公布号 US7313021(B2) 申请公布日期 2007.12.25
申请号 US20050239802 申请日期 2005.09.30
申请人 NSCORE INC. 发明人 HORIUCHI TADAHIKO
分类号 G11C11/34;G11C11/00 主分类号 G11C11/34
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