发明名称 Apparatus and method for reactive atom plasma processing for material deposition
摘要 Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are moved with respect to each other, whether by translating and/or rotating the workpiece, the plasma, or both. The plasma discharge from the torch can be used to shape, planarize, polish, clean and/or deposit material on the surface of the workpiece, as well as to thin the workpiece. The processing may cause minimal or no damage to the workpiece underneath the surface, and may involve removing material from, and/or redistributing material on, the surface of the workpiece. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.
申请公布号 US7311851(B2) 申请公布日期 2007.12.25
申请号 US20030608384 申请日期 2003.06.27
申请人 发明人
分类号 B44C1/22;H05H1/26;C03C15/00;C23C16/04;C23C16/513;H01L21/00;H01L21/302;H01L21/3065;H01L21/3105;H05H1/30;H05H1/42 主分类号 B44C1/22
代理机构 代理人
主权项
地址