发明名称 |
Laser processing apparatus |
摘要 |
The present invention provides a laser processing apparatus having a laser oscillator for outputting a pulsed laser beam; deflection unit for deflecting the pulsed laser beam to irradiate a object to be processed with the deflected pulsed laser beam; a mounting base on which the object is placed and which is movable in an axial direction or two-axial directions perpendicular to each other; and local shielding unit for controlling an atmosphere around the surface of the object to be processed which is irradiated with the laser beam. When a thin semiconductor film with a thickness of 1 mum or less is formed over the surface, minute convex portions are formed, which causes a problem that characteristics of TFTs vary among elements. Minute particles generated and adhered to a main surface of a substrate through a laser processing, which is difficult to remove in general surface cleaning, become preventable by the invention.
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申请公布号 |
US7312135(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20030654611 |
申请日期 |
2003.09.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYAIRI HIDEKAZU;ARAI YASUYUKI |
分类号 |
H01L21/301;B23K26/00;B23K26/08;B23K26/12;B23K26/14;B23K26/16;B23K101/40;H01L21/02;H01L21/46;H01L21/78 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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