发明名称 Laser processing apparatus
摘要 The present invention provides a laser processing apparatus having a laser oscillator for outputting a pulsed laser beam; deflection unit for deflecting the pulsed laser beam to irradiate a object to be processed with the deflected pulsed laser beam; a mounting base on which the object is placed and which is movable in an axial direction or two-axial directions perpendicular to each other; and local shielding unit for controlling an atmosphere around the surface of the object to be processed which is irradiated with the laser beam. When a thin semiconductor film with a thickness of 1 mum or less is formed over the surface, minute convex portions are formed, which causes a problem that characteristics of TFTs vary among elements. Minute particles generated and adhered to a main surface of a substrate through a laser processing, which is difficult to remove in general surface cleaning, become preventable by the invention.
申请公布号 US7312135(B2) 申请公布日期 2007.12.25
申请号 US20030654611 申请日期 2003.09.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYAIRI HIDEKAZU;ARAI YASUYUKI
分类号 H01L21/301;B23K26/00;B23K26/08;B23K26/12;B23K26/14;B23K26/16;B23K101/40;H01L21/02;H01L21/46;H01L21/78 主分类号 H01L21/301
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