| 摘要 |
In a method of forming a metal-insulator-metal (MIM) capacitor in a semiconductor device, after forming a capacitor insulation layer on a lower metal layer of the MIM capacitor, an upper electrode is formed by ion implantation into the capacitor insulation layer and silicidation, without a typical reactive ion etching process. Consequently, damage to the capacitor insulation layer can be minimized, and the area of the capacitor need not increase.
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