发明名称 |
System and method for designing semiconductor photomasks |
摘要 |
A trial semiconductor photomask design having discontinuity points is provided, and each of the discontinuity points is treated as simulated light sources. Simulated light from each of the simulated light sources is focused, and a composite image intensity of the focused simulated light is calculated to verify the trial semiconductor photomask design. The trial semiconductor photomask design is sharpened. A photomask design specification is generated for use in fabricating such a photomask.
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申请公布号 |
US7313780(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20050078820 |
申请日期 |
2005.03.10 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
KHOH ANDREW;CHOI BYONG-IL;CHAN LAP;SAMUDRA GANESH;WU YIHONG |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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