发明名称 |
SRAM voltage control for improved operational margins |
摘要 |
A static random access memory ("SRAM") is provided which includes a plurality of SRAM cells arranged in an array. The array includes a plurality of rows and a plurality of columns. The SRAM includes a plurality of voltage control corresponding to respective ones of the plurality of columns of the array. Each of the plurality of voltage control circuits are coupled to an output of a power supply, each voltage control circuit having a function to temporarily reduce a voltage provided to power supply inputs of a plurality of SRAM cells that belong to a selected column of columns of the SRAM. The selected column is selected and the power supply voltage to that column is reduced during a write operation in which a bit is written to one of the SRAM cells belonging to the selected column.
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申请公布号 |
US7313032(B2) |
申请公布日期 |
2007.12.25 |
申请号 |
US20050164556 |
申请日期 |
2005.11.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ELLIS WAYNE F.;MANN RANDY W.;WAGER DAVID J.;WONG ROBERT C. |
分类号 |
G11C5/14;G11C11/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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