| 摘要 |
A method is provided for processing a sample surface to be flat by irradiating the sample surface with a gas cluster ion beam. In the method, a cluster of a material gas is generated in a cluster generating chamber (11), the generated cluster is ionized in an ionizing chamber (13), the beam of the ionized cluster is accelerated by the magnetic field of an accelerating electrode (15), a cluster size is selected by the magnetic field of a cluster size selecting mechanism (17) and the surface of a sample (20) is irradiated with the beam. An irradiation angle between the sample surface and the gas cluster ion beam is smaller than 30° and an average cluster size of the gas cluster ion beam is 50 or more.
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