| 摘要 |
A semiconductor light emitting device is provided to suppress metal migration of an optical reflective metal layer by forming an optical reflective metal layer in a part of the outer circumference of the other main surface of a light emitting semiconductor region and by disposing a migration control layer in a part of the outer circumference. A light emitting semiconductor region has one main surface(12) and the other main surface(13), including a plurality of semiconductor layers for generating light. An optical reflective metal layer(3) is not disposed in a part of the outer circumference(13b) of the other main surface of the light emitting semiconductor region, but is disposed in an inner portion of the outer circumference. A migration control layer(6) is disposed in a part of the outer circumference of the other main surface of the light emitting semiconductor region where the optical reflective metal layer is not formed, having a function of controlling the migration of metal included in the optical reflective metal layer. A support substrate(2) supports the light emitting semiconductor region. A junction metal layer(4,5) is made of a material in which migration is more difficult to occur than in the optical reflective metal layer, disposed between the optical reflective metal layer/the migration control layer and the support substrate. An electrode(7,8) is formed on one main surface of the light emitting semiconductor region. The migration control layer is made of the same material as the junction metal layer.
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