| 摘要 |
A slurry for polishing metal wiring is provided to form metal wiring stably by inhibiting excessive corrosion of the metal wiring while improving a polishing rate of the metal wiring during a semiconductor manufacture process. A slurry for polishing metal wiring includes an oxidant, a corrosion inhibitor, and a polishing rate improver. The polishing rate improver is a compound having at least one nitrogen atom within an aromatic ring, wherein the nitrogen atom is not directly bond to a hydrogen atom capable of being dissociated into proton within slurry and has at least one lone pair. The polishing rate improver is a pyrimidine, pyrazole, pyridazine, pyrazine, pyridine, triazine, triazole, thiazole, thiadiazole, or imidazole-based compound.
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