COMPOSITION FOR REMOVING A SILICON POLYMER AND A PHOTORESIST, A METHOD OF REMOVING LAYERS AND A METHOD OF FORMING A PATTERN USING THE COMPOSITION

摘要

A composition for removing a silicon polymer and a photoresist is provided to effectively remove both a silicon polymer-containing hard mask layer and a photoresist pattern without forming etching residues. A composition for removing a silicon polymer and a photoresist comprises 0.1-2wt% of quaternary ammonium hydroxide, 5-30wt% of a sulfoxide compound, 50-84.9wt% of dialkyleneglycolalkylether, and 5-30wt% of water. A method for removing layers includes the steps of: preparing the composition; and applying the composition onto a silicon polymer layer(130) and a photoresist layer(140), and removing the silicon polymer layer and the photoresist layer in situ at 20-60 °C.