METHOD AND SYSTEM FOR FORMING A NITRIDED GERMANIUM-CONTAINING LAYER USING PLASMA PROCESSING

摘要

A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N₂ and a noble gas, where the plasma conditions are selected effective to form plasma excited N₂ species while controlling formation of plasma excited N species, and exposing the substrate to the plasma to form a nitrided germanium-containing layer on the substrate. A method is also provided that includes exposing a germanium-containing dielectric layer to liquid or gaseous H₂O to alter the thickness and chemical composition of the layer.