| 摘要 |
<p>A variable resistance element (1) having a resistance changed when a voltage pulse is applied is set to a low resistance state by applying an erase pulse to a path of a broken line through selection of a selection transistor. An erase pulse limit resistor (2) is inserted into the path of the broken line. A resistance value (Re) of the erase pulse limit resistor (2) is set so that a first resistance value as a sum of the all-ON resistance of the selection transistor, the resistance value (Re), and the wiring resistance in the path is not smaller than a bulk resistance value of a thin film material used for the variable resistance element (1). Thus, it is possible to prevent lowering of the variable resistance element (1) to a bulk resistance value from which it cannot return to a stable resistance.</p> |
