METHOD OF MANUFACTURING SILICON NANOWIRES USING SILICON NANODOT THIN FILM
摘要
<p>Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.</p>
申请公布号
WO2007145407(A1)
申请公布日期
2007.12.21
申请号
WO2006KR05309
申请日期
2006.12.08
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;PARK, RAE-MAN;KIM, SANG-HYEOB;PARK, JONGHYURK;MAENG, SUNGLYUL
发明人
PARK, RAE-MAN;KIM, SANG-HYEOB;PARK, JONGHYURK;MAENG, SUNGLYUL