发明名称 |
LOW CONTACT RESISTANCE CMOS CIRCUITS AND METHODS FOR THEIR FABRICATION |
摘要 |
<p>A low contact resistance CMOS integrated circuit [50] and method for its fabrication are provided. The CMOS integrated circuit [50] comprises a first transition metal [102] electrically coupled to the N-type circuit regions [72, 74] and a second transition metal [98] different than the first transition metal electrically coupled to the P-type circuit regions [76, 78]. A conductive barrier layer [104] overlies each of the first transition metal and the second transition metal and a plug metal [110] overlies the conductive barrier layer.</p> |
申请公布号 |
WO2007145695(A1) |
申请公布日期 |
2007.12.21 |
申请号 |
WO2007US07549 |
申请日期 |
2007.03.29 |
申请人 |
ADVANCED MICRO DEVICES, INC;BESSER, PAUL, R. |
发明人 |
BESSER, PAUL, R. |
分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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