METHOD OF FORMING SILICON NANO CRYSTALS AND METHOD OF MANUFACTURING MEMORY DEVICE USING THE SAME

摘要

A method for forming silicon nano crystals is provided to prevent an oxide layer(tunneling layer) from being damaged by diffused silicon and obtain nano crystals with uniform size and distribution by performing an annealing process on an amorphous silicon layer in an incomplete oxidation condition. An amorphous layer(24) is formed on a base layer. An incomplete oxidation process is performed on the amorphous layer so that the amorphous layer is transformed into an oxide layer(22) including nano crystals. In the incomplete oxidation of the amorphous layer, an annealing process can be performed on the amorphous layer at a temperature of 900 °C and for a time interval of 2-3 minutes in a gas atmosphere of nitrogen of 90 percent and oxygen of 10 percent.