| 摘要 |
A method for preparing Bi-Te based N type thermoelectric materials is provided to improve crystallographic alignment by sintering the powder mixture through the discharge plasma sintering process after mixing a coarse powder with a fine powder, and obtain thermoelectric materials that have excellent mechanical strength and are beneficial in aspects of performance and manufacturing cost by densifying and easily controlling structures of the thermoelectric materials. A method for preparing a Bi-Te based N type thermoelectric material comprises: a vacuum sealing step of vacuum sealing Bi, Te and Se elements, and SbI3 dopant in a quartz tube in accordance with an N type composition; an ingot manufacturing step of agitating and furnace-cooling the sealed quartz tube in an agitation furnace to manufacture an ingot; a crushing step of crushing the ingot; a milling step of milling the crushed powder; a sorting step of separating a coarse powder and a fine powder from the milled powder; a hydrogen reduction step of charging the sorted powders into a Pyrex tube, filling hydrogen in the Pyrex tube, sealing the hydrogen filled Pyrex tube, and heating the Pyrex tube to a predetermined temperature, and holding the Pyrex tube at the temperature to reduce hydrogen of the powders; a mixing step of mixing the coarse powder and the fine powder passing through the hydrogen reduction step, charging the powder mixture into an ample, vacuum sealing the ample, and mixing the powder mixture using a three-dimensional mixer; and a sintering step of sintering the mixed powder using a discharge plasma sintering equipment. |
