发明名称 PLANARIZATION OF SUBSTRATES AT A HIGH POLISHING RATE USING ELECTROCHEMICAL MECHANICAL POLISHING
摘要 A method and apparatus for removing conductive material from a substrate surface are provided. In one embodiment, a method is provided for electrochemical mechanical polishing of a substrate. A substrate comprising dielectric feature definitions, a barrier material disposed on the feature definitions, and a bulk conductive material in an amount sufficient to fill the feature definitions is provided. The substrate is exposed to an electrolyte solution. A passivation layer is formed on the conductive material. The passivation strength of the passivation layer is increased by polishing the substrate with a first voltage for a first time period. The substrate is polished with a second voltage higher than the first voltage for a second time period. Conductive material is removed from at least a portion of the substrate surface by anodic dissolution.
申请公布号 WO2007121177(A3) 申请公布日期 2007.12.21
申请号 WO2007US66329 申请日期 2007.04.10
申请人 APPLIED MATERIALS, INC.;DUBOUST, ALAIN;HSU, WEI-YUNG;LIU, FENG Q.;WANG, YAN;WANG, ZHIHONG;ECONOMIKOS, LAERTIS 发明人 DUBOUST, ALAIN;HSU, WEI-YUNG;LIU, FENG Q.;WANG, YAN;WANG, ZHIHONG;ECONOMIKOS, LAERTIS
分类号 B24B1/00;B24B7/19 主分类号 B24B1/00
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