SEMICONDUCTOR FILTER STRUCTURE AND METHOD OF MANUFACTURE

摘要

A semiconductor filter structure is provided to simplify a filter structure by including an incorporated structure of a floating capacitor and a transient voltage suppression device. A semiconductor region of a first conductivity type has a first main surface. A first floating capacitor device is formed near to the first main surface. A first transient voltage suppression device(337) is formed near to the first main surface. The first floating capacitor device and the first transient voltage suppression device share a first doped region of a second conductivity type formed in the semiconductor region. The first doping region ends at the first main surface so that the first floating capacitor device is placed on a part of the semiconductor region and a part of the first doping region. The first floating capacitor device can include a capacitive layer, a first conductive layer formed on the capacitive layer, and a second conductive layer. The first conductive layer forms a first plate of the first floating capacitor device. The capacitive layer is placed on the first main surface over a part of the first doping region. The second conductive layer is coupled to the first doping region in the first main surface. The first doping region forms a second plate of the first floating capacitor device and an electrode of the first transient voltage suppression device.