SINGLE CRYSTAL OF NITRIDE OF GROUP III ELEMENT AND METHOD OF GROWING THE SAME
摘要
<p>A method of growing a good-quality single crystal of a Group III element nitride with satisfactory reproducibility; and a single crystal of a Group III element nitride obtained by the growth method. The method comprises growing a single crystal (3) of a Group III element nitride in a crystal growth vessel (11), and is characterized in that a porous object which is made of a metal carbide and has a porosity of 0.1-70% is used as at least part of the crystal growth vessel (11). Due to the use of this crystal growth vessel (11), 1-50% of a raw-material gas (4) present in the crystal growth vessel (11) can be discharged from the crystal growth vessel (11) through pores of the porous object.</p>
申请公布号
WO2007144955(A1)
申请公布日期
2007.12.21
申请号
WO2006JP312122
申请日期
2006.06.16
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.;MIYANAGA, MICHIMASA;MIZUHARA, NAHO;FUJIWARA, SHINSUKE;NAKAHATA, SEIJI;NAKAHATA, HIDEAKI