METHOD OF MANUFACTURING GATE SIDEWALLS THAT AVOIDS RECESSING
摘要
<p>A method of manufacturing a semiconductor device (200) comprising removing a first oxide layer (405) deposited over a semiconductor substrate (210), thereby exposing source and drain regions (510) of the substrate. The first oxide layer is configured as an etch- stop for forming silicon nitride sidewall spacers (410) of a gate structure (205) located adjacent to the source and drain regions. The method further comprises depositing a second oxide layer 710 selectively on the exposed source and drain regions and then removing lateral segments 810 of the silicon nitride sidewall spacers.</p>
