发明名称 SEMICONDUCTOR DEFECT ANALYSIS DEVICE, DEFECT ANALYSIS METHOD, AND DEFECT ANALYSIS PROGRAM
摘要 <p>A defect analysis device (10) includes an inspection information acquisition unit (11) for acquiring a defect observation image (P2) of a semiconductor device; a layout information acquisition unit (12) for acquiring layout information; and a defect analysis unit (13) for analyzing a defect. The defect analysis unit (13) extracts a net candidate which passes through at least one of analysis regions set from the defect observation image among a plurality of semiconductor device nets and the number of passing the analysis region by the net candidate and selects a net candidate having the largest number of times of passing as a first defective net. The defect analysis unit (13) pays attention on an analysis region where the first defective net has not passed so as to select a second defective net. This realizes a semiconductor defect analysis device, a defect analysis method, and a defect analysis program capable of surely and effectively performing analysis of a semiconductor device defect by using a defect observation image.</p>
申请公布号 WO2007144971(A1) 申请公布日期 2007.12.21
申请号 WO2006JP321067 申请日期 2006.10.23
申请人 HAMAMATSU PHOTONICS K.K.;MAJIMA, TOSHIYUKI;SHIMASE, AKIRA;TERADA, HIROTOSHI;HOTTA, KAZUHIRO 发明人 MAJIMA, TOSHIYUKI;SHIMASE, AKIRA;TERADA, HIROTOSHI;HOTTA, KAZUHIRO
分类号 G01R31/311;G01N21/956 主分类号 G01R31/311
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