ORGANIC THIN FILM TRANSISTOR AND PRODUCTION METHOD OF ORGANIC THIM FILM TRANSISTOR

摘要

An organic TFT(thin film transistor) is provided to reduce off-current and increase an on/off current ratio by restraining a leakage current between electrodes of an organic TFT. A plurality of grooves are formed in a substrate(100). A drain electrode(120) and a source electrode(110) are deposited in the groove. An organic semiconductor layer is formed on the substrate. A gate insulation layer(140) is formed on the organic semiconductor layer. A gate electrode(150) is formed on the gate insulation layer. The groove is formed by a patterning process. At least one of the drain electrode and the source electrode is deposited to a height not higher than the surface of the substrate.