| 摘要 |
A thin film transistor, a fabrication method thereof, an LCD using the same, and a fabrication method thereof are provided to improve mobility of carriers and remove a need for an additional process for crystallization by using a nanowire for a semiconductor layer. A gate electrode(111) is formed on a predetermined portion on a substrate(110). A gate dielectric layer(112) is formed on the entire substrate including the gate electrode. A semiconductor layer(120) is formed on the gate electrode on the gate dielectric layer, and is formed of a nano material. A fixing plate(121) is formed at a central portion on the semiconductor layer. A source electrode(130) and a drain electrode(131) are formed at a predetermined interval at both sides of the semiconductor layer. The nano material is one of a nanowire, a nanocable, and a nanotube. |
