| 摘要 |
A thermosetting silicon-containing film-forming composition is provided to allow good pattern formation even in a high NA exposure condition, and to form a silicon-containing film for a good dry etching mask between a photoresist layer and an organic layer. A thermosetting silicon-containing film-forming composition includes (A-1) a silicon-containing compound obtained by substantially removing an acid catalyst from a reaction mixture of silicon-containing compounds prepared by hydrolysis-condensing a hydrolyzable silicon compound using at least one compound selected from inorganic acids or sulfonic acid derivatives as the acid catalyst, (A-2) a silicon-containing compound obtained by substantially removing a basic catalyst from a reaction mixture of silicon-containing compounds prepared by hydrolysis-condensing a hydrolyzable silicon compound using the basic catalyst, (B) a compound represented by the following formula 1 of LaHbX or formula 2 of MA, (C) a monovalent or multivalent organic acid having 1-30 carbon atoms, and (D) an organic solvent. In the formula 1, L is lithium, sodium, potassium, rubidium, or cesium, X is a hydroxyl group, or a monovalent or multivalent organic acid group having 1-30 carbon atoms, a is an integer of 1 or greater, b is an integer of 0 or greater, and a+b is the number of hydroxyl groups or organic acid groups. In the formula 2, M is sulfonium, iodonium, or ammonium, and A is a non-nucleophilic counter ion. |
