| 摘要 |
<P>PROBLEM TO BE SOLVED: To aim at the further improvement of light extraction efficiency in a GaN light-emitting diode element which attains the improvement of the light extraction efficiency, using a non-flat refractive-index interface like a GaN light-emitting element in which a GaN semiconductor layer including a light-emitting structure is formed on a processed substrate. <P>SOLUTION: A GaN semiconductor layer 20 has a portion where the refractive index increases toward the side of a main plane S, in a region between the main plane S having a concave part and a convex part and a light-emitting layer 22. The distance from the main plane is 1/2 or less of the distance D from the main plane S to the light-emitting layer 22. <P>COPYRIGHT: (C)2008,JPO&INPIT |
