SEMICONDUCTOR LIGHT-EMITTING TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting transistor which can have optical properties and electrical properties concurrently.

SOLUTION: The semiconductor light emitting transistor includes: a first conductive type collector layer 110 formed on a substrate 100; a second conductive type base layer 130 formed in a part area on the collector layer; a collector electrode 110a formed in a part area on the collector layer where the base layer is not formed; a first conductive type emitter layer 150 formed in a part area on the base layer; a base electrode 130a formed in a part area on the base layer where the emitter layer is not formed; an emitter electrode 150a formed on the emitter layer; a first light emitting layer 120 formed between the collector layer and the base layer; and a second light emitting layer 140 formed between the base layer and the emitter layer.

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