发明名称 MEMORY MODULE RELIEF METHOD, MEMORY MODULE, AND VOLATILE MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a memory module relief method and a memory module in which a defective memory cell can be relieved without replacing a volatile memory which has been determined as being defective in an electrical test of the memory module. SOLUTION: A defective row address and a defective column address corresponding to a memory cell of the volatile memory cell which has been determined as being defective, and defective device information for identifying the volatile memory cell which has been determined as being defective, are previously stored in a non-volatile memory. During startup of a system, these pieces of information stored in the non-volatile memory are transferred to and held in a volatile memory via an address terminal. When an address corresponding to the volatile memory cell which has been determined as being defective is input, a redundant memory cell is accessed instead of that memory cell using the information held in the volatile memory cell. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007328914(A) 申请公布日期 2007.12.20
申请号 JP20070234329 申请日期 2007.09.10
申请人 ELPIDA MEMORY INC 发明人 WATANABE TAKAYUKI
分类号 G11C29/04;G11C11/401 主分类号 G11C29/04
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